RT1C060UNTR
Images are for reference only. See Product Specifications for product details.
Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | RT1C060UNTR |
| Manufacturer | LAPIS Semiconductor |
| Description | MOSFET N-CH 20V 6A TSST8 |
| Datasheet | View Datasheet |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - FETs, MOSFETs - Single |
| Vgs Max | ±10V |
| F E T Type | N-Channel |
| Packaging | Cut Tape (CT) |
| Other Names | RT1C060UNCT RT1C060UNTRCT RT1C060UNTRCT-ND |
| Technology | MOSFET (Metal Oxide) |
| Vgsth Max Id | 1V @ 1mA |
| Package Case | 8-SMD, Flat Lead |
| Mounting Type | Surface Mount |
| Rds On Max Id Vgs | 28 mOhm @ 6A, 4.5V |
| Gate Charge Qg Max Vgs | 11nC @ 4.5V |
| Detailed Description | N-Channel 20V 6A (Ta) 650mW (Ta) Surface Mount 8-TSST |
| Power Dissipation Max | 650mW (Ta) |
| Operating Temperature | 150°C (TJ) |
| Supplier Device Package | 8-TSST |
| Drainto Source Voltage Vdss | 20V |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Input Capacitance Ciss Max Vds | 870pF @ 10V |
| Current Continuous Drain Id25 C | 6A (Ta) |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |
| Drive Voltage Max Rds On Min Rds On | 1.5V, 4.5V |