RQ7E110AJTCR
Images are for reference only. See Product Specifications for product details.
Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | RQ7E110AJTCR |
| Manufacturer | LAPIS Semiconductor |
| Description | NCH 30V 11A MIDDLE POWER MOSFET |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - FETs, MOSFETs - Single |
| Vgs Max | ±12V |
| F E T Type | N-Channel |
| Packaging | Tape & Reel (TR) |
| Other Names | RQ7E110AJTCRTR |
| Technology | MOSFET (Metal Oxide) |
| Vgsth Max Id | 1.5V @ 10mA |
| Package Case | 8-SMD, Flat Lead |
| Mounting Type | Surface Mount |
| Rds On Max Id Vgs | 9 mOhm @ 4.5A, 11V |
| Gate Charge Qg Max Vgs | 22nC @ 4.5V |
| Detailed Description | N-Channel 30V 11A (Tc) 1.5W (Tc) Surface Mount TSMT8 |
| Power Dissipation Max | 1.5W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Supplier Device Package | TSMT8 |
| Drainto Source Voltage Vdss | 30V |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Input Capacitance Ciss Max Vds | 2410pF @ 15V |
| Current Continuous Drain Id25 C | 11A (Tc) |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |
| Drive Voltage Max Rds On Min Rds On | 4.5V |