RQ3E075ATTB
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Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | RQ3E075ATTB |
| Manufacturer | LAPIS Semiconductor |
| Description | MOSFET P-CHANNEL 30V 18A 8HSMT |
| Datasheet | View Datasheet |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - FETs, MOSFETs - Single |
| Vgs Max | ±20V |
| F E T Type | P-Channel |
| Packaging | Tape & Reel (TR) |
| Other Names | RQ3E075ATTBTR |
| Technology | MOSFET (Metal Oxide) |
| Vgsth Max Id | 2.5V @ 1mA |
| Package Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Rds On Max Id Vgs | 23 mOhm @ 7.5A, 10V |
| Gate Charge Qg Max Vgs | 10.4nC @ 4.5V |
| Detailed Description | P-Channel 30V 18A (Tc) 15W (Tc) Surface Mount 8-HSMT (3.2x3) |
| Power Dissipation Max | 15W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Supplier Device Package | 8-HSMT (3.2x3) |
| Drainto Source Voltage Vdss | 30V |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Input Capacitance Ciss Max Vds | 930pF @ 15V |
| Current Continuous Drain Id25 C | 18A (Tc) |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |
| Drive Voltage Max Rds On Min Rds On | 10V |