RHU002N06T106
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Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | RHU002N06T106 |
| Manufacturer | LAPIS Semiconductor |
| Description | MOSFET N-CH 60V 200MA SOT-323 |
| Datasheet | View Datasheet |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - FETs, MOSFETs - Single |
| Vgs Max | ±20V |
| F E T Type | N-Channel |
| Packaging | Tape & Reel (TR) |
| Other Names | RHU002N06T106-ND RHU002N06T106TR |
| Technology | MOSFET (Metal Oxide) |
| Package Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Rds On Max Id Vgs | 2.4 Ohm @ 200mA, 10V |
| Gate Charge Qg Max Vgs | 4.4nC @ 10V |
| Detailed Description | N-Channel 60V 200mA (Ta) 200mW (Ta) Surface Mount UMT3 |
| Power Dissipation Max | 200mW (Ta) |
| Operating Temperature | 150°C (TJ) |
| Supplier Device Package | UMT3 |
| Drainto Source Voltage Vdss | 60V |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Input Capacitance Ciss Max Vds | 15pF @ 10V |
| Current Continuous Drain Id25 C | 200mA (Ta) |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |
| Drive Voltage Max Rds On Min Rds On | 4V, 10V |