PSMN6R3-120ESQ
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Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | PSMN6R3-120ESQ |
| Manufacturer | Nexperia |
| Description | MOSFET N-CH 120V 70A I2PAK |
| Datasheet | View Datasheet |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - FETs, MOSFETs - Single |
| Vgs Max | ±20V |
| F E T Type | N-Channel |
| Packaging | Tube |
| Other Names | 1727-1508 568-10988-5 568-10988-5-ND 934067856127 PSMN6R3-120ESQ-ND |
| Technology | MOSFET (Metal Oxide) |
| Vgsth Max Id | 4V @ 250µA |
| Package Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Mounting Type | Through Hole |
| Rds On Max Id Vgs | 6.7 mOhm @ 25A, 10V |
| Gate Charge Qg Max Vgs | 207.1nC @ 10V |
| Detailed Description | N-Channel 120V 70A (Tc) 405W (Tc) Through Hole I2PAK |
| Power Dissipation Max | 405W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Supplier Device Package | I2PAK |
| Drainto Source Voltage Vdss | 120V |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Input Capacitance Ciss Max Vds | 11384pF @ 60V |
| Current Continuous Drain Id25 C | 70A (Tc) |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |
| Drive Voltage Max Rds On Min Rds On | 10V |