NVD4809NHT4G

Invent, Innovate, Integrate

Images are for reference only. See Product Specifications for product details.

Part Number	NVD4809NHT4G
Manufacturer	AMI Semiconductor / ON Semiconductor
Description	MOSFET N-CH 30V 58A DPAK
Category	Discrete Semiconductor Products
Subcategory	Transistors - FETs, MOSFETs - Single
Vgs Max	±20V
F E T Type	N-Channel
Packaging	Tape & Reel (TR)
Technology	MOSFET (Metal Oxide)
Vgsth Max Id	2.5V @ 250µA
Package Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type	Surface Mount
Rds On Max Id Vgs	9 mOhm @ 30A, 10V
Gate Charge Qg Max Vgs	44nC @ 11.5V
Detailed Description	326777
Power Dissipation Max	1.3W (Ta), 52W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Supplier Device Package	DPAK
Drainto Source Voltage Vdss	30V
Lead Free Status Ro H S Status	Lead free / RoHS Compliant
Input Capacitance Ciss Max Vds	2155pF @ 12V
Current Continuous Drain Id25 C	9A (Ta), 58A (Tc)
Moisture Sensitivity Level M S L	1 (Unlimited)
Drive Voltage Max Rds On Min Rds On	4.5V, 11.5V

Loading security check...

Please verify you are human by completing the security check.