NVATS5A112PLZT4G
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Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | NVATS5A112PLZT4G |
| Manufacturer | AMI Semiconductor / ON Semiconductor |
| Description | MOSFET P-CHANNEL 60V 27A ATPAK |
| Datasheet | View Datasheet |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - FETs, MOSFETs - Single |
| Vgs Max | ±20V |
| F E T Type | P-Channel |
| Packaging | Tape & Reel (TR) |
| Other Names | NVATS5A112PLZT4G-ND NVATS5A112PLZT4GOSTR |
| Technology | MOSFET (Metal Oxide) |
| Vgsth Max Id | 2.6V @ 1mA |
| Package Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Rds On Max Id Vgs | 43 mOhm @ 13A, 10V |
| Gate Charge Qg Max Vgs | 33.5nC @ 10V |
| Detailed Description | P-Channel 60V 27A (Ta) 48W (Tc) Surface Mount ATPAK |
| Power Dissipation Max | 48W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Supplier Device Package | ATPAK |
| Drainto Source Voltage Vdss | 60V |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Input Capacitance Ciss Max Vds | 1450pF @ 20V |
| Current Continuous Drain Id25 C | 27A (Ta) |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |
| Drive Voltage Max Rds On Min Rds On | 4V, 10V |