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NTP8G202NG

Images are for reference only. See Product Specifications for product details.

Product Details

Part Number NTP8G202NG
Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET N-CH 600V 9A TO220
Datasheet View Datasheet
Category Discrete Semiconductor Products
Subcategory Transistors - FETs, MOSFETs - Single
Vgs Max ±18V
F E T Type N-Channel
Packaging Tube
Other Names NTP8G202NGOS
Technology GaNFET (Gallium Nitride)
Vgsth Max Id 2.6V @ 500µA
Package Case TO-220-3
Mounting Type Through Hole
Rds On Max Id Vgs 350 mOhm @ 5.5A, 8V
Gate Charge Qg Max Vgs 9.3nC @ 4.5V
Detailed Description 350893
Power Dissipation Max 65W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Supplier Device Package TO-220-3
Drainto Source Voltage Vdss 600V
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Input Capacitance Ciss Max Vds 760pF @ 400V
Current Continuous Drain Id25 C 9A (Tc)
Moisture Sensitivity Level M S L 1 (Unlimited)
Drive Voltage Max Rds On Min Rds On 8V

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