NTMSD6N303R2

Invent, Innovate, Integrate

Images are for reference only. See Product Specifications for product details.

Part Number	NTMSD6N303R2
Manufacturer	AMI Semiconductor / ON Semiconductor
Description	MOSFET N-CH 30V 6A 8-SOIC
Datasheet	View Datasheet
Category	Discrete Semiconductor Products
Subcategory	Transistors - FETs, MOSFETs - Single
Series	FETKY™
Vgs Max	±20V
F E T Type	N-Channel
Packaging	Tape & Reel (TR)
F E T Feature	Schottky Diode (Isolated)
Other Names	NTMSD6N303R2OS
Technology	MOSFET (Metal Oxide)
Vgsth Max Id	2.5V @ 250µA
Package Case	8-SOIC (0.154", 3.90mm Width)
Mounting Type	Surface Mount
Rds On Max Id Vgs	32 mOhm @ 6A, 10V
Gate Charge Qg Max Vgs	30nC @ 10V
Detailed Description	326435
Power Dissipation Max	2W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Supplier Device Package	8-SOIC
Drainto Source Voltage Vdss	30V
Lead Free Status Ro H S Status	Contains lead / RoHS non-compliant
Input Capacitance Ciss Max Vds	950pF @ 24V
Current Continuous Drain Id25 C	6A (Ta)
Moisture Sensitivity Level M S L	1 (Unlimited)
Drive Voltage Max Rds On Min Rds On	4.5V, 10V

Loading security check...

Please verify you are human by completing the security check.