NTMS4P01R2

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Part Number	NTMS4P01R2
Manufacturer	AMI Semiconductor / ON Semiconductor
Description	MOSFET P-CH 12V 3.4A 8-SOIC
Datasheet	View Datasheet
Category	Discrete Semiconductor Products
Subcategory	Transistors - FETs, MOSFETs - Single
Vgs Max	±10V
F E T Type	P-Channel
Packaging	Tape & Reel (TR)
Other Names	NTMS4P01R2OS
Technology	MOSFET (Metal Oxide)
Vgsth Max Id	1.15V @ 250µA
Package Case	8-SOIC (0.154", 3.90mm Width)
Mounting Type	Surface Mount
Rds On Max Id Vgs	45 mOhm @ 4.5A, 4.5V
Gate Charge Qg Max Vgs	35nC @ 4.5V
Detailed Description	343120
Power Dissipation Max	790mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Supplier Device Package	8-SOIC
Drainto Source Voltage Vdss	12V
Lead Free Status Ro H S Status	Contains lead / RoHS non-compliant
Input Capacitance Ciss Max Vds	1850pF @ 9.6V
Current Continuous Drain Id25 C	3.4A (Ta)
Moisture Sensitivity Level M S L	1 (Unlimited)
Drive Voltage Max Rds On Min Rds On	2.5V, 4.5V

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