NTHD4N02FT1G
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Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | NTHD4N02FT1G |
| Manufacturer | AMI Semiconductor / ON Semiconductor |
| Description | MOSFET N-CH 20V 2.9A CHIPFET |
| Datasheet | View Datasheet |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - FETs, MOSFETs - Single |
| Vgs Max | ±12V |
| F E T Type | N-Channel |
| Packaging | Tape & Reel (TR) |
| F E T Feature | Schottky Diode (Isolated) |
| Other Names | NTHD4N02FT1GOS |
| Technology | MOSFET (Metal Oxide) |
| Vgsth Max Id | 1.2V @ 250µA |
| Package Case | 8-SMD, Flat Lead |
| Mounting Type | Surface Mount |
| Rds On Max Id Vgs | 80 mOhm @ 2.9A, 4.5V |
| Gate Charge Qg Max Vgs | 4nC @ 4.5V |
| Detailed Description | N-Channel 20V 2.9A (Tj) 910mW (Tj) Surface Mount ChipFET™ |
| Power Dissipation Max | 910mW (Tj) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Supplier Device Package | ChipFET™ |
| Drainto Source Voltage Vdss | 20V |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Input Capacitance Ciss Max Vds | 300pF @ 10V |
| Current Continuous Drain Id25 C | 2.9A (Tj) |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |
| Drive Voltage Max Rds On Min Rds On | 2.5V, 4.5V |