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NTD5865N-1G

Images are for reference only. See Product Specifications for product details.

Product Details

Part Number NTD5865N-1G
Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET N-CH 60V 43A DPAK
Category Discrete Semiconductor Products
Subcategory Transistors - FETs, MOSFETs - Single
Vgs Max ±20V
F E T Type N-Channel
Packaging Tube
Other Names NTD5865N-1G-ND NTD5865N-1GOS
Technology MOSFET (Metal Oxide)
Vgsth Max Id 4V @ 250µA
Package Case TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type Surface Mount
Rds On Max Id Vgs 18 mOhm @ 20A, 10V
Gate Charge Qg Max Vgs 23nC @ 10V
Detailed Description 334605
Power Dissipation Max 71W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Supplier Device Package DPAK
Drainto Source Voltage Vdss 60V
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Input Capacitance Ciss Max Vds 1261pF @ 25V
Current Continuous Drain Id25 C 43A (Tc)
Moisture Sensitivity Level M S L 1 (Unlimited)
Drive Voltage Max Rds On Min Rds On 10V

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