NP80N055NDG-S18-AY
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Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | NP80N055NDG-S18-AY |
| Manufacturer | Renesas Electronics America |
| Description | MOSFET N-CH 55V 80A TO-262 |
| Datasheet | View Datasheet |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - FETs, MOSFETs - Single |
| Vgs Max | ±20V |
| F E T Type | N-Channel |
| Packaging | Tube |
| Technology | MOSFET (Metal Oxide) |
| Vgsth Max Id | 2.5V @ 250µA |
| Package Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Mounting Type | Through Hole |
| Rds On Max Id Vgs | 6.9 mOhm @ 40A, 10V |
| Gate Charge Qg Max Vgs | 135nC @ 10V |
| Detailed Description | N-Channel 55V 80A (Tc) 1.8W (Ta), 115W (Tc) Through Hole TO-262 |
| Power Dissipation Max | 1.8W (Ta), 115W (Tc) |
| Operating Temperature | 175°C (TJ) |
| Supplier Device Package | TO-262 |
| Drainto Source Voltage Vdss | 55V |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Input Capacitance Ciss Max Vds | 6900pF @ 25V |
| Current Continuous Drain Id25 C | 80A (Tc) |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |
| Drive Voltage Max Rds On Min Rds On | 4.5V, 10V |