NDD60N900U1-35G
Images are for reference only. See Product Specifications for product details.
Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | NDD60N900U1-35G |
| Manufacturer | AMI Semiconductor / ON Semiconductor |
| Description | MOSFET N-CH 600V 5.9A IPAK-3 |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - FETs, MOSFETs - Single |
| Vgs Max | ±25V |
| F E T Type | N-Channel |
| Packaging | Tube |
| Technology | MOSFET (Metal Oxide) |
| Vgsth Max Id | 4V @ 250µA |
| Package Case | TO-251-3 Short Leads, IPak, TO-251AA |
| Mounting Type | Through Hole |
| Rds On Max Id Vgs | 900 mOhm @ 2.5A, 10V |
| Gate Charge Qg Max Vgs | 12nC @ 10V |
| Detailed Description | N-Channel 600V 5.7A (Tc) 74W (Tc) Through Hole I-PAK |
| Power Dissipation Max | 74W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Supplier Device Package | I-PAK |
| Drainto Source Voltage Vdss | 600V |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Input Capacitance Ciss Max Vds | 360pF @ 50V |
| Current Continuous Drain Id25 C | 5.7A (Tc) |
| Moisture Sensitivity Level M S L | 3 (168 Hours) |
| Drive Voltage Max Rds On Min Rds On | 10V |