MTY100N10E

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Part Number	MTY100N10E
Manufacturer	AMI Semiconductor / ON Semiconductor
Description	MOSFET N-CH 100V 100A TO-264
Datasheet	View Datasheet
Category	Discrete Semiconductor Products
Subcategory	Transistors - FETs, MOSFETs - Single
Vgs Max	±20V
F E T Type	N-Channel
Packaging	Tube
Other Names	MTY100N10EOS
Technology	MOSFET (Metal Oxide)
Vgsth Max Id	4V @ 250µA
Package Case	TO-264-3, TO-264AA
Mounting Type	Through Hole
Rds On Max Id Vgs	11 mOhm @ 50A, 10V
Gate Charge Qg Max Vgs	378nC @ 10V
Detailed Description	335648
Power Dissipation Max	300W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Supplier Device Package	TO-264
Drainto Source Voltage Vdss	100V
Lead Free Status Ro H S Status	Contains lead / RoHS non-compliant
Input Capacitance Ciss Max Vds	10640pF @ 25V
Current Continuous Drain Id25 C	100A (Tc)
Moisture Sensitivity Level M S L	1 (Unlimited)
Drive Voltage Max Rds On Min Rds On	10V

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