IXTM12N100

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Part Number	IXTM12N100
Manufacturer	IXYS Corporation
Description	POWER MOSFET TO-3
Category	Discrete Semiconductor Products
Subcategory	Transistors - FETs, MOSFETs - Single
Series	GigaMOS™
Vgs Max	±20V
F E T Type	N-Channel
Technology	MOSFET (Metal Oxide)
Vgsth Max Id	4.5V @ 250µA
Package Case	TO-204AA, TO-3
Mounting Type	Through Hole
Rds On Max Id Vgs	1.05 Ohm @ 6A, 10V
Gate Charge Qg Max Vgs	170nC @ 10V
Detailed Description	333241
Power Dissipation Max	300W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Supplier Device Package	TO-204AA
Drainto Source Voltage Vdss	1000V
Lead Free Status Ro H S Status	Lead free / RoHS Compliant
Input Capacitance Ciss Max Vds	4000pF @ 25V
Current Continuous Drain Id25 C	12A (Tc)
Moisture Sensitivity Level M S L	1 (Unlimited)
Drive Voltage Max Rds On Min Rds On	10V

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