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IXTH3N100P

Images are for reference only. See Product Specifications for product details.

Product Details

Part Number IXTH3N100P
Manufacturer IXYS Corporation
Description MOSFET N-CH 1000V 3A TO-247
Datasheet View Datasheet
Category Discrete Semiconductor Products
Subcategory Transistors - FETs, MOSFETs - Single
Series PolarVHV™
Vgs Max ±20V
F E T Type N-Channel
Packaging Tube
Technology MOSFET (Metal Oxide)
Vgsth Max Id 4.5V @ 250µA
Package Case TO-247-3
Mounting Type Through Hole
Rds On Max Id Vgs 4.8 Ohm @ 1.5A, 10V
Gate Charge Qg Max Vgs 39nC @ 10V
Detailed Description 333868
Power Dissipation Max 125W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Supplier Device Package TO-247 (IXTH)
Drainto Source Voltage Vdss 1000V
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Input Capacitance Ciss Max Vds 1100pF @ 25V
Current Continuous Drain Id25 C 3A (Tc)
Moisture Sensitivity Level M S L 1 (Unlimited)
Drive Voltage Max Rds On Min Rds On 10V

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