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IXTI10N60P

Images are for reference only. See Product Specifications for product details.

Product Details

Part Number IXTI10N60P
Manufacturer IXYS Corporation
Description MOSFET N-CH 600V 10A I2-PAK
Datasheet View Datasheet
Category Discrete Semiconductor Products
Subcategory Transistors - FETs, MOSFETs - Single
Series PolarHV™
Vgs Max ±30V
F E T Type N-Channel
Packaging Tube
Technology MOSFET (Metal Oxide)
Vgsth Max Id 5V @ 100µA
Package Case TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type Through Hole
Rds On Max Id Vgs 740 mOhm @ 5A, 10V
Gate Charge Qg Max Vgs 32nC @ 10V
Detailed Description N-Channel 600V 10A (Tc) 200W (Tc) Through Hole TO-262 (I2PAK)
Power Dissipation Max 200W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Supplier Device Package TO-262 (I2PAK)
Drainto Source Voltage Vdss 600V
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Input Capacitance Ciss Max Vds 1610pF @ 25V
Current Continuous Drain Id25 C 10A (Tc)
Moisture Sensitivity Level M S L 1 (Unlimited)
Drive Voltage Max Rds On Min Rds On 10V

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