IXFT6N100F
Images are for reference only. See Product Specifications for product details.
Images are for reference only. See Product Specifications for product details.
| Part Number | IXFT6N100F |
| Manufacturer | IXYS RF |
| Description | MOSFET N-CH 1000V 6A TO268 |
| Datasheet | View Datasheet |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - FETs, MOSFETs - Single |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Vgsth Max Id | 5.5V @ 2.5mA |
| Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | TO-268 (IXFT) |
| Series | HiPerRF™ |
| Rds On Max Id Vgs | 1.9 Ohm @ 3A, 10V |
| Power Dissipation Max | 180W (Tc) |
| Packaging | Tube |
| Package Case | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |
| F E T Type | N-Channel |
| Detailed Description | N-Channel 1000V 6A (Tc) 180W (Tc) Surface Mount TO-268 (IXFT) |
| Current Continuous Drain Id25 C | 6A (Tc) |
| Vgs Max | ±20V |
| Input Capacitance Ciss Max Vds | 1770pF @ 25V |
| Gate Charge Qg Max Vgs | 54nC @ 10V |
| Drive Voltage Max Rds On Min Rds On | 10V |
| Drainto Source Voltage Vdss | 1000V |