IXFM11N80

Invent, Innovate, Integrate

Images are for reference only. See Product Specifications for product details.

Part Number	IXFM11N80
Manufacturer	IXYS Corporation
Description	POWER MOSFET TO-3
Category	Discrete Semiconductor Products
Subcategory	Transistors - FETs, MOSFETs - Single
Series	HiPerFET™
Vgs Max	±20V
F E T Type	N-Channel
Technology	MOSFET (Metal Oxide)
Vgsth Max Id	4.5V @ 4mA
Package Case	TO-204AA, TO-3
Mounting Type	Through Hole
Rds On Max Id Vgs	950 mOhm @ 5.5A, 10V
Gate Charge Qg Max Vgs	155nC @ 10V
Detailed Description	341965
Power Dissipation Max	300W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Supplier Device Package	TO-204AA
Drainto Source Voltage Vdss	800V
Lead Free Status Ro H S Status	Lead free / RoHS Compliant
Input Capacitance Ciss Max Vds	4200pF @ 25V
Current Continuous Drain Id25 C	11A (Tc)
Moisture Sensitivity Level M S L	1 (Unlimited)
Drive Voltage Max Rds On Min Rds On	10V

Loading security check...

Please verify you are human by completing the security check.