IRLW510ATM
Images are for reference only. See Product Specifications for product details.
Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | IRLW510ATM |
| Manufacturer | AMI Semiconductor / ON Semiconductor |
| Description | MOSFET N-CH 100V 5.6A I2PAK |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - FETs, MOSFETs - Single |
| Vgs Max | ±20V |
| F E T Type | N-Channel |
| Packaging | Tape & Reel (TR) |
| Technology | MOSFET (Metal Oxide) |
| Vgsth Max Id | 2V @ 250µA |
| Package Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Mounting Type | Through Hole |
| Rds On Max Id Vgs | 440 mOhm @ 2.8A, 5V |
| Gate Charge Qg Max Vgs | 8nC @ 5V |
| Detailed Description | N-Channel 100V 5.6A (Tc) 3.8W (Ta), 37W (Tc) Through Hole I2PAK (TO-262) |
| Power Dissipation Max | 3.8W (Ta), 37W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Supplier Device Package | I2PAK (TO-262) |
| Drainto Source Voltage Vdss | 100V |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Input Capacitance Ciss Max Vds | 235pF @ 25V |
| Current Continuous Drain Id25 C | 5.6A (Tc) |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |
| Drive Voltage Max Rds On Min Rds On | 5V |