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Product Image
IRLD110

Images are for reference only. See Product Specifications for product details.

Product Details

Part Number IRLD110
Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET N-CH 100V 1A 4-DIP
Datasheet View Datasheet
Category Discrete Semiconductor Products
Subcategory Transistors - FETs, MOSFETs - Single
Vgs Max ±10V
F E T Type N-Channel
Packaging Tube
Other Names *IRLD110
Technology MOSFET (Metal Oxide)
Vgsth Max Id 2V @ 250µA
Package Case 4-DIP (0.300", 7.62mm)
Mounting Type Through Hole
Rds On Max Id Vgs 540 mOhm @ 600mA, 5V
Gate Charge Qg Max Vgs 6.1nC @ 5V
Detailed Description N-Channel 100V 1A (Ta) 1.3W (Ta) Through Hole 4-DIP, Hexdip, HVMDIP
Power Dissipation Max 1.3W (Ta)
Operating Temperature -55°C ~ 175°C (TJ)
Supplier Device Package 4-DIP, Hexdip, HVMDIP
Drainto Source Voltage Vdss 100V
Lead Free Status Ro H S Status Contains lead / RoHS non-compliant
Input Capacitance Ciss Max Vds 250pF @ 25V
Current Continuous Drain Id25 C 1A (Ta)
Moisture Sensitivity Level M S L 1 (Unlimited)
Drive Voltage Max Rds On Min Rds On 4V, 5V

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