IRFD110
Images are for reference only. See Product Specifications for product details.
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Images are for reference only. See Product Specifications for product details.
| Part Number | IRFD110 |
| Manufacturer | Electro-Films (EFI) / Vishay |
| Description | MOSFET N-CH 100V 1A 4-DIP |
| Datasheet | View Datasheet |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - FETs, MOSFETs - Single |
| Vgs Max | ±20V |
| F E T Type | N-Channel |
| Packaging | Tube |
| Other Names | *IRFD110 IRFD111 IRFD112 |
| Technology | MOSFET (Metal Oxide) |
| Vgsth Max Id | 4V @ 250µA |
| Package Case | 4-DIP (0.300", 7.62mm) |
| Mounting Type | Through Hole |
| Rds On Max Id Vgs | 540 mOhm @ 600mA, 10V |
| Gate Charge Qg Max Vgs | 8.3nC @ 10V |
| Detailed Description | 328483 |
| Power Dissipation Max | 1.3W (Ta) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Supplier Device Package | 4-DIP, Hexdip, HVMDIP |
| Drainto Source Voltage Vdss | 100V |
| Lead Free Status Ro H S Status | Contains lead / RoHS non-compliant |
| Input Capacitance Ciss Max Vds | 180pF @ 25V |
| Current Continuous Drain Id25 C | 1A (Ta) |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |
| Drive Voltage Max Rds On Min Rds On | 10V |