IRF6691TR1PBF
Images are for reference only. See Product Specifications for product details.
Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | IRF6691TR1PBF |
| Manufacturer | International Rectifier (Infineon Technologies) |
| Description | MOSFET N-CH 20V 32A DIRECTFET |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - FETs, MOSFETs - Single |
| Series | HEXFET® |
| Vgs Max | ±12V |
| F E T Type | N-Channel |
| Packaging | Cut Tape (CT) |
| Other Names | IRF6691TR1PBFCT |
| Technology | MOSFET (Metal Oxide) |
| Vgsth Max Id | 2.5V @ 250µA |
| Package Case | DirectFET™ Isometric MT |
| Mounting Type | Surface Mount |
| Rds On Max Id Vgs | 1.8 mOhm @ 15A, 10V |
| Gate Charge Qg Max Vgs | 71nC @ 4.5V |
| Detailed Description | N-Channel 20V 32A (Ta), 180A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount DIRECTFET™ MT |
| Power Dissipation Max | 2.8W (Ta), 89W (Tc) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Supplier Device Package | DIRECTFET™ MT |
| Drainto Source Voltage Vdss | 20V |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Input Capacitance Ciss Max Vds | 6580pF @ 10V |
| Current Continuous Drain Id25 C | 32A (Ta), 180A (Tc) |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |
| Drive Voltage Max Rds On Min Rds On | 4.5V, 10V |