IPP12CNE8N G
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Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | IPP12CNE8N G |
| Manufacturer | International Rectifier (Infineon Technologies) |
| Description | MOSFET N-CH 85V 67A TO-220 |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - FETs, MOSFETs - Single |
| Series | OptiMOS™ |
| Vgs Max | ±20V |
| F E T Type | N-Channel |
| Packaging | Tube |
| Other Names | IPP12CNE8N G-ND IPP12CNE8NG IPP12CNE8NGX IPP12CNE8NGXK SP000096467 |
| Technology | MOSFET (Metal Oxide) |
| Vgsth Max Id | 4V @ 83µA |
| Package Case | TO-220-3 |
| Mounting Type | Through Hole |
| Rds On Max Id Vgs | 12.9 mOhm @ 67A, 10V |
| Gate Charge Qg Max Vgs | 64nC @ 10V |
| Detailed Description | N-Channel 85V 67A (Tc) 125W (Tc) Through Hole PG-TO-220-3 |
| Power Dissipation Max | 125W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Supplier Device Package | PG-TO-220-3 |
| Drainto Source Voltage Vdss | 85V |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Input Capacitance Ciss Max Vds | 4340pF @ 40V |
| Current Continuous Drain Id25 C | 67A (Tc) |
| Moisture Sensitivity Level M S L | 3 (168 Hours) |
| Drive Voltage Max Rds On Min Rds On | 10V |