IPI65R660CFDXKSA1
Images are for reference only. See Product Specifications for product details.
Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | IPI65R660CFDXKSA1 |
| Manufacturer | International Rectifier (Infineon Technologies) |
| Description | MOSFET N-CH 650V 6A TO262 |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - FETs, MOSFETs - Single |
| Series | CoolMOS™ |
| Vgs Max | ±20V |
| F E T Type | N-Channel |
| Packaging | Tube |
| Other Names | IPI65R660CFD IPI65R660CFD-ND SP000861696 |
| Technology | MOSFET (Metal Oxide) |
| Vgsth Max Id | 4.5V @ 200µA |
| Package Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Mounting Type | Through Hole |
| Rds On Max Id Vgs | 660 mOhm @ 2.1A, 10V |
| Gate Charge Qg Max Vgs | 22nC @ 10V |
| Detailed Description | N-Channel 650V 6A (Tc) 62.5W (Tc) Through Hole PG-TO262-3 |
| Power Dissipation Max | 62.5W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Supplier Device Package | PG-TO262-3 |
| Drainto Source Voltage Vdss | 650V |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Input Capacitance Ciss Max Vds | 615pF @ 100V |
| Current Continuous Drain Id25 C | 6A (Tc) |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |
| Drive Voltage Max Rds On Min Rds On | 10V |