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IPI126N10N3 G

Images are for reference only. See Product Specifications for product details.

Product Details

Part Number IPI126N10N3 G
Manufacturer International Rectifier (Infineon Technologies)
Description MOSFET N-CH 100V 58A TO262-3
Category Discrete Semiconductor Products
Subcategory Transistors - FETs, MOSFETs - Single
Series OptiMOS™
Vgs Max ±20V
F E T Type N-Channel
Packaging Tube
Other Names IPI126N10N3 G-ND IPI126N10N3G
Technology MOSFET (Metal Oxide)
Vgsth Max Id 3.5V @ 46µA
Package Case TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type Through Hole
Rds On Max Id Vgs 12.6 mOhm @ 46A, 10V
Gate Charge Qg Max Vgs 35nC @ 10V
Detailed Description N-Channel 100V 58A (Tc) 94W (Tc) Through Hole PG-TO262-3
Power Dissipation Max 94W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Supplier Device Package PG-TO262-3
Drainto Source Voltage Vdss 100V
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Input Capacitance Ciss Max Vds 2500pF @ 50V
Current Continuous Drain Id25 C 58A (Tc)
Moisture Sensitivity Level M S L 1 (Unlimited)
Drive Voltage Max Rds On Min Rds On 6V, 10V

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