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Manufacturer Image
IPD60N10S4L12ATMA1

Images are for reference only. See Product Specifications for product details.

Product Details

Part Number IPD60N10S4L12ATMA1
Manufacturer International Rectifier (Infineon Technologies)
Description MOSFET N-CH TO252-3
Category Discrete Semiconductor Products
Subcategory Transistors - FETs, MOSFETs - Single
Series Automotive, AEC-Q101, HEXFET®
Vgs Max ±16V
F E T Type N-Channel
Packaging Tape & Reel (TR)
Other Names IPD60N10S4L12ATMA1-ND IPD60N10S4L12ATMA1TR SP000866550
Technology MOSFET (Metal Oxide)
Vgsth Max Id 2.1V @ 46µA
Package Case TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type Surface Mount
Rds On Max Id Vgs 12 mOhm @ 60A, 10V
Gate Charge Qg Max Vgs 49nC @ 10V
Detailed Description N-Channel 100V 60A (Tc) 94W (Tc) Surface Mount PG-TO252-3-313
Power Dissipation Max 94W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Supplier Device Package PG-TO252-3-313
Drainto Source Voltage Vdss 100V
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Input Capacitance Ciss Max Vds 3170pF @ 25V
Current Continuous Drain Id25 C 60A (Tc)
Moisture Sensitivity Level M S L 1 (Unlimited)
Drive Voltage Max Rds On Min Rds On 4.5V, 10V

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