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Manufacturer Image
IPD33CN10NGATMA1

Images are for reference only. See Product Specifications for product details.

Product Details

Part Number IPD33CN10NGATMA1
Manufacturer International Rectifier (Infineon Technologies)
Description MOSFET N-CH 100V 27A TO252-3
Category Discrete Semiconductor Products
Subcategory Transistors - FETs, MOSFETs - Single
Series OptiMOS™
Vgs Max ±20V
F E T Type N-Channel
Packaging Cut Tape (CT)
Other Names IPD33CN10NGATMA1CT
Technology MOSFET (Metal Oxide)
Vgsth Max Id 4V @ 29µA
Package Case TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type Surface Mount
Rds On Max Id Vgs 33 mOhm @ 27A, 10V
Gate Charge Qg Max Vgs 24nC @ 10V
Detailed Description N-Channel 100V 27A (Tc) 58W (Tc) Surface Mount PG-TO252-3
Power Dissipation Max 58W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Supplier Device Package PG-TO252-3
Drainto Source Voltage Vdss 100V
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Input Capacitance Ciss Max Vds 1570pF @ 50V
Current Continuous Drain Id25 C 27A (Tc)
Moisture Sensitivity Level M S L 3 (168 Hours)
Drive Voltage Max Rds On Min Rds On 10V

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