IPD26N06S2L35ATMA2
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Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | IPD26N06S2L35ATMA2 |
| Manufacturer | International Rectifier (Infineon Technologies) |
| Description | MOSFET N-CH 55V 30A TO252-3 |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - FETs, MOSFETs - Single |
| Series | OptiMOS™ |
| Vgs Max | ±20V |
| F E T Type | N-Channel |
| Packaging | Original-Reel® |
| Other Names | IPD26N06S2L35ATMA2DKR |
| Technology | MOSFET (Metal Oxide) |
| Vgsth Max Id | 2V @ 26µA |
| Package Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Rds On Max Id Vgs | 35 mOhm @ 13A, 10V |
| Gate Charge Qg Max Vgs | 24nC @ 10V |
| Detailed Description | N-Channel 55V 30A (Tc) 68W (Tc) Surface Mount PG-TO252-3-11 |
| Power Dissipation Max | 68W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Supplier Device Package | PG-TO252-3-11 |
| Drainto Source Voltage Vdss | 55V |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Input Capacitance Ciss Max Vds | 621pF @ 25V |
| Current Continuous Drain Id25 C | 30A (Tc) |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |
| Drive Voltage Max Rds On Min Rds On | 4.5V, 10V |