IPB80N06S2H5ATMA2
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Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | IPB80N06S2H5ATMA2 |
| Manufacturer | International Rectifier (Infineon Technologies) |
| Description | MOSFET N-CH 55V 80A TO263-3 |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - FETs, MOSFETs - Single |
| Series | OptiMOS™ |
| Vgs Max | ±20V |
| F E T Type | N-Channel |
| Packaging | Tape & Reel (TR) |
| Other Names | IPB80N06S2H5ATMA2-ND IPB80N06S2H5ATMA2TR SP000376884 |
| Technology | MOSFET (Metal Oxide) |
| Vgsth Max Id | 4V @ 230µA |
| Package Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Rds On Max Id Vgs | 5.2 mOhm @ 80A, 10V |
| Gate Charge Qg Max Vgs | 155nC @ 10V |
| Detailed Description | N-Channel 55V 80A (Tc) 300W (Tc) Surface Mount PG-TO263-3-2 |
| Power Dissipation Max | 300W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Supplier Device Package | PG-TO263-3-2 |
| Drainto Source Voltage Vdss | 55V |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Input Capacitance Ciss Max Vds | 4400pF @ 25V |
| Current Continuous Drain Id25 C | 80A (Tc) |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |
| Drive Voltage Max Rds On Min Rds On | 10V |