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Manufacturer Image
IPB083N10N3GATMA1

Images are for reference only. See Product Specifications for product details.

Product Details

Part Number IPB083N10N3GATMA1
Manufacturer International Rectifier (Infineon Technologies)
Description MOSFET N-CH 100V 80A TO263-3
Category Discrete Semiconductor Products
Subcategory Transistors - FETs, MOSFETs - Single
Series OptiMOS™
Vgs Max ±20V
F E T Type N-Channel
Packaging Tape & Reel (TR)
Other Names IPB083N10N3 G IPB083N10N3 G-ND IPB083N10N3 GTR-ND IPB083N10N3G IPB083N10N3GATMA1TR SP000458812
Technology MOSFET (Metal Oxide)
Vgsth Max Id 3.5V @ 75µA
Package Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type Surface Mount
Rds On Max Id Vgs 8.3 mOhm @ 73A, 10V
Gate Charge Qg Max Vgs 55nC @ 10V
Detailed Description N-Channel 100V 80A (Tc) 125W (Tc) Surface Mount D²PAK (TO-263AB)
Power Dissipation Max 125W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Supplier Device Package D²PAK (TO-263AB)
Drainto Source Voltage Vdss 100V
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Input Capacitance Ciss Max Vds 3980pF @ 50V
Current Continuous Drain Id25 C 80A (Tc)
Moisture Sensitivity Level M S L 1 (Unlimited)
Drive Voltage Max Rds On Min Rds On 6V, 10V

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