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Manufacturer Image
IPB029N06N3GATMA1

Images are for reference only. See Product Specifications for product details.

Product Details

Part Number IPB029N06N3GATMA1
Manufacturer International Rectifier (Infineon Technologies)
Description MOSFET N-CH 60V 120A TO263-3
Category Discrete Semiconductor Products
Subcategory Transistors - FETs, MOSFETs - Single
Series OptiMOS™
Vgs Max ±20V
F E T Type N-Channel
Packaging Cut Tape (CT)
Other Names IPB029N06N3 GCT IPB029N06N3 GCT-ND IPB029N06N3GATMA1CT
Technology MOSFET (Metal Oxide)
Vgsth Max Id 4V @ 118µA
Package Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type Surface Mount
Rds On Max Id Vgs 2.9 mOhm @ 100A, 10V
Gate Charge Qg Max Vgs 165nC @ 10V
Detailed Description N-Channel 60V 120A (Tc) 188W (Tc) Surface Mount D²PAK (TO-263AB)
Power Dissipation Max 188W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Supplier Device Package D²PAK (TO-263AB)
Drainto Source Voltage Vdss 60V
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Input Capacitance Ciss Max Vds 13000pF @ 30V
Current Continuous Drain Id25 C 120A (Tc)
Moisture Sensitivity Level M S L 1 (Unlimited)
Drive Voltage Max Rds On Min Rds On 10V

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