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GP2M011A090NG

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Product Details

Part Number GP2M011A090NG
Manufacturer Global Power Technologies Group
Description MOSFET N-CH 900V 11A TO3PN
Datasheet View Datasheet
Category Discrete Semiconductor Products
Subcategory Transistors - FETs, MOSFETs - Single
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Vgsth Max Id 5V @ 250µA
Technology MOSFET (Metal Oxide)
Supplier Device Package TO-3PN
Rds On Max Id Vgs 900 mOhm @ 5.5A, 10V
Power Dissipation Max 416W (Tc)
Packaging Tube
Package Case TO-3P-3, SC-65-3
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Moisture Sensitivity Level M S L 1 (Unlimited)
F E T Type N-Channel
Detailed Description N-Channel 900V 11A (Tc) 416W (Tc) Through Hole TO-3PN
Current Continuous Drain Id25 C 11A (Tc)
Vgs Max ±30V
Other Names 1560-1209-1 1560-1209-1-ND 1560-1209-5
Input Capacitance Ciss Max Vds 3240pF @ 25V
Gate Charge Qg Max Vgs 84nC @ 10V
Drive Voltage Max Rds On Min Rds On 10V
Drainto Source Voltage Vdss 900V

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