GP2M011A090NG
Images are for reference only. See Product Specifications for product details.
Images are for reference only. See Product Specifications for product details.
| Part Number | GP2M011A090NG |
| Manufacturer | Global Power Technologies Group |
| Description | MOSFET N-CH 900V 11A TO3PN |
| Datasheet | View Datasheet |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - FETs, MOSFETs - Single |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Vgsth Max Id | 5V @ 250µA |
| Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | TO-3PN |
| Rds On Max Id Vgs | 900 mOhm @ 5.5A, 10V |
| Power Dissipation Max | 416W (Tc) |
| Packaging | Tube |
| Package Case | TO-3P-3, SC-65-3 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |
| F E T Type | N-Channel |
| Detailed Description | N-Channel 900V 11A (Tc) 416W (Tc) Through Hole TO-3PN |
| Current Continuous Drain Id25 C | 11A (Tc) |
| Vgs Max | ±30V |
| Other Names | 1560-1209-1 1560-1209-1-ND 1560-1209-5 |
| Input Capacitance Ciss Max Vds | 3240pF @ 25V |
| Gate Charge Qg Max Vgs | 84nC @ 10V |
| Drive Voltage Max Rds On Min Rds On | 10V |
| Drainto Source Voltage Vdss | 900V |