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GP2M004A065HG

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Product Details

Part Number GP2M004A065HG
Manufacturer Global Power Technologies Group
Description MOSFET N-CH 650V 4A TO220
Datasheet View Datasheet
Category Discrete Semiconductor Products
Subcategory Transistors - FETs, MOSFETs - Single
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Vgsth Max Id 5V @ 250µA
Technology MOSFET (Metal Oxide)
Supplier Device Package TO-220
Rds On Max Id Vgs 2.4 Ohm @ 2A, 10V
Power Dissipation Max 98.4W (Tc)
Packaging Tape & Reel (TR)
Package Case TO-220-3
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Moisture Sensitivity Level M S L 1 (Unlimited)
F E T Type N-Channel
Detailed Description N-Channel 650V 4A (Tc) 98.4W (Tc) Through Hole TO-220
Current Continuous Drain Id25 C 4A (Tc)
Vgs Max ±30V
Input Capacitance Ciss Max Vds 642pF @ 25V
Gate Charge Qg Max Vgs 15nC @ 10V
Drive Voltage Max Rds On Min Rds On 10V
Drainto Source Voltage Vdss 650V

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