GP2M002A060HG
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Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | GP2M002A060HG |
| Manufacturer | Global Power Technologies Group |
| Description | MOSFET N-CH 600V 2A TO220 |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - FETs, MOSFETs - Single |
| Vgs Max | ±30V |
| F E T Type | N-Channel |
| Packaging | Tape & Reel (TR) |
| Technology | MOSFET (Metal Oxide) |
| Vgsth Max Id | 5V @ 250µA |
| Package Case | TO-220-3 |
| Mounting Type | Through Hole |
| Rds On Max Id Vgs | 4 Ohm @ 1A, 10V |
| Gate Charge Qg Max Vgs | 9nC @ 10V |
| Detailed Description | N-Channel 600V 2A (Tc) 52.1W (Tc) Through Hole TO-220 |
| Power Dissipation Max | 52.1W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Supplier Device Package | TO-220 |
| Drainto Source Voltage Vdss | 600V |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Input Capacitance Ciss Max Vds | 360pF @ 25V |
| Current Continuous Drain Id25 C | 2A (Tc) |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |
| Drive Voltage Max Rds On Min Rds On | 10V |