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GP1M009A090N

Images are for reference only. See Product Specifications for product details.

Product Details

Part Number GP1M009A090N
Manufacturer Global Power Technologies Group
Description MOSFET N-CH 900V 9.5A TO3PN
Datasheet View Datasheet
Category Discrete Semiconductor Products
Subcategory Transistors - FETs, MOSFETs - Single
Vgs Max ±30V
F E T Type N-Channel
Packaging Tube
Other Names 1560-1174-1 1560-1174-1-ND 1560-1174-5
Technology MOSFET (Metal Oxide)
Vgsth Max Id 4V @ 250µA
Package Case TO-3P-3, SC-65-3
Mounting Type Through Hole
Rds On Max Id Vgs 1.4 Ohm @ 4.75A, 10V
Gate Charge Qg Max Vgs 65nC @ 10V
Detailed Description 322464
Power Dissipation Max 312W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Supplier Device Package TO-3PN
Drainto Source Voltage Vdss 900V
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Input Capacitance Ciss Max Vds 2324pF @ 25V
Current Continuous Drain Id25 C 9.5A (Tc)
Moisture Sensitivity Level M S L 1 (Unlimited)
Drive Voltage Max Rds On Min Rds On 10V

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