Product Image
GP1M009A090N

Images are for reference only. See Product Specifications for product details.

Product Details

Part Number GP1M009A090N
Manufacturer Global Power Technologies Group
Description MOSFET N-CH 900V 9.5A TO3PN
Datasheet View Datasheet
Category Discrete Semiconductor Products
Subcategory Transistors - FETs, MOSFETs - Single
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Vgsth Max Id 4V @ 250µA
Technology MOSFET (Metal Oxide)
Supplier Device Package TO-3PN
Rds On Max Id Vgs 1.4 Ohm @ 4.75A, 10V
Power Dissipation Max 312W (Tc)
Packaging Tube
Package Case TO-3P-3, SC-65-3
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Moisture Sensitivity Level M S L 1 (Unlimited)
F E T Type N-Channel
Detailed Description N-Channel 900V 9.5A (Tc) 312W (Tc) Through Hole TO-3PN
Current Continuous Drain Id25 C 9.5A (Tc)
Vgs Max ±30V
Other Names 1560-1174-1 1560-1174-1-ND 1560-1174-5
Input Capacitance Ciss Max Vds 2324pF @ 25V
Gate Charge Qg Max Vgs 65nC @ 10V
Drive Voltage Max Rds On Min Rds On 10V
Drainto Source Voltage Vdss 900V

REQUEST A QUOTE


Contact Us

We're here round-the-clock for inquiries, partnership opportunities, or any assistance you need.

Contact Us