GP1M009A020HG
Images are for reference only. See Product Specifications for product details.
Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | GP1M009A020HG |
| Manufacturer | Global Power Technologies Group |
| Description | MOSFET N-CH 200V 9A TO220 |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - FETs, MOSFETs - Single |
| Vgs Max | ±30V |
| F E T Type | N-Channel |
| Packaging | Tape & Reel (TR) |
| Technology | MOSFET (Metal Oxide) |
| Vgsth Max Id | 5V @ 250µA |
| Package Case | TO-220-3 |
| Mounting Type | Through Hole |
| Rds On Max Id Vgs | 400 mOhm @ 4.5A, 10V |
| Gate Charge Qg Max Vgs | 8.6nC @ 10V |
| Detailed Description | N-Channel 200V 9A (Tc) 52W (Tc) Through Hole TO-220 |
| Power Dissipation Max | 52W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Supplier Device Package | TO-220 |
| Drainto Source Voltage Vdss | 200V |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Input Capacitance Ciss Max Vds | 414pF @ 25V |
| Current Continuous Drain Id25 C | 9A (Tc) |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |
| Drive Voltage Max Rds On Min Rds On | 10V |