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GP1M006A065FH

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Product Details

Part Number GP1M006A065FH
Manufacturer Global Power Technologies Group
Description MOSFET N-CH 650V 5.5A TO220F
Datasheet View Datasheet
Category Discrete Semiconductor Products
Subcategory Transistors - FETs, MOSFETs - Single
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Vgsth Max Id 4V @ 250µA
Technology MOSFET (Metal Oxide)
Supplier Device Package TO-220F
Rds On Max Id Vgs 1.6 Ohm @ 2.75A, 10V
Power Dissipation Max 39W (Tc)
Packaging Tube
Package Case TO-220-3 Full Pack
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Moisture Sensitivity Level M S L 1 (Unlimited)
F E T Type N-Channel
Detailed Description N-Channel 650V 5.5A (Tc) 39W (Tc) Through Hole TO-220F
Current Continuous Drain Id25 C 5.5A (Tc)
Vgs Max ±30V
Other Names 1560-1161-1 1560-1161-1-ND 1560-1161-5
Input Capacitance Ciss Max Vds 1177pF @ 25V
Gate Charge Qg Max Vgs 17nC @ 10V
Drive Voltage Max Rds On Min Rds On 10V
Drainto Source Voltage Vdss 650V

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