GA10SICP12-263
Images are for reference only. See Product Specifications for product details.
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Images are for reference only. See Product Specifications for product details.
| Part Number | GA10SICP12-263 |
| Manufacturer | GeneSiC Semiconductor |
| Description | TRANS SJT 1200V 25A TO263-7 |
| Datasheet | View Datasheet |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - FETs, MOSFETs - Single |
| Packaging | Tube |
| Other Names | 1242-1318 GA10SICP12-263-ND |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| Package Case | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
| Mounting Type | Surface Mount |
| Rds On Max Id Vgs | 100 mOhm @ 10A |
| Detailed Description | 345638 |
| Power Dissipation Max | 170W (Tc) |
| Operating Temperature | 175°C (TJ) |
| Supplier Device Package | D2PAK (7-Lead) |
| Drainto Source Voltage Vdss | 1200V |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Input Capacitance Ciss Max Vds | 1403pF @ 800V |
| Current Continuous Drain Id25 C | 25A (Tc) |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |