GA10JT12-263
Images are for reference only. See Product Specifications for product details.
Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | GA10JT12-263 |
| Manufacturer | GeneSiC Semiconductor |
| Description | TRANS SJT 1200V 25A |
| Datasheet | View Datasheet |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - FETs, MOSFETs - Single |
| Packaging | Tube |
| Other Names | 1242-1186 GA10JT12-220ISO GA10JT12220ISO |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| Mounting Type | Surface Mount |
| Rds On Max Id Vgs | 120 mOhm @ 10A |
| Detailed Description | 1200V 25A (Tc) 170W (Tc) Surface Mount |
| Power Dissipation Max | 170W (Tc) |
| Operating Temperature | 175°C (TJ) |
| Drainto Source Voltage Vdss | 1200V |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Input Capacitance Ciss Max Vds | 1403pF @ 800V |
| Current Continuous Drain Id25 C | 25A (Tc) |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |