FQT7N10TF
Images are for reference only. See Product Specifications for product details.
Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | FQT7N10TF |
| Manufacturer | AMI Semiconductor / ON Semiconductor |
| Description | MOSFET N-CH 100V 1.7A SOT-223 |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - FETs, MOSFETs - Single |
| Series | QFET® |
| Vgs Max | ±25V |
| F E T Type | N-Channel |
| Packaging | Tape & Reel (TR) |
| Other Names | FQT7N10TF-ND FQT7N10TFTR |
| Technology | MOSFET (Metal Oxide) |
| Vgsth Max Id | 4V @ 250µA |
| Package Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Rds On Max Id Vgs | 350 mOhm @ 850mA, 10V |
| Gate Charge Qg Max Vgs | 7.5nC @ 10V |
| Detailed Description | N-Channel 100V 1.7A (Tc) 2W (Tc) Surface Mount SOT-223-4 |
| Power Dissipation Max | 2W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Supplier Device Package | SOT-223-4 |
| Drainto Source Voltage Vdss | 100V |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Input Capacitance Ciss Max Vds | 250pF @ 25V |
| Current Continuous Drain Id25 C | 1.7A (Tc) |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |
| Drive Voltage Max Rds On Min Rds On | 10V |