FQP4N80

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Part Number	FQP4N80
Manufacturer	AMI Semiconductor / ON Semiconductor
Description	MOSFET N-CH 800V 3.9A TO-220
Category	Discrete Semiconductor Products
Subcategory	Transistors - FETs, MOSFETs - Single
Series	QFET®
Vgs Max	±30V
F E T Type	N-Channel
Packaging	Tube
Other Names	FQP4N80-ND FQP4N80FS
Technology	MOSFET (Metal Oxide)
Vgsth Max Id	5V @ 250µA
Package Case	TO-220-3
Mounting Type	Through Hole
Rds On Max Id Vgs	3.6 Ohm @ 1.95A, 10V
Gate Charge Qg Max Vgs	25nC @ 10V
Detailed Description	335067
Power Dissipation Max	130W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Supplier Device Package	TO-220AB
Drainto Source Voltage Vdss	800V
Lead Free Status Ro H S Status	Lead free / RoHS Compliant
Input Capacitance Ciss Max Vds	880pF @ 25V
Current Continuous Drain Id25 C	3.9A (Tc)
Moisture Sensitivity Level M S L	1 (Unlimited)
Drive Voltage Max Rds On Min Rds On	10V

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