FQN1N60CBU
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Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | FQN1N60CBU |
| Manufacturer | AMI Semiconductor / ON Semiconductor |
| Description | MOSFET N-CH 600V 0.3A TO-92 |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - FETs, MOSFETs - Single |
| Series | QFET® |
| Vgs Max | ±30V |
| F E T Type | N-Channel |
| Packaging | Bulk |
| Technology | MOSFET (Metal Oxide) |
| Vgsth Max Id | 4V @ 250µA |
| Package Case | TO-226-3, TO-92-3 (TO-226AA) |
| Mounting Type | Through Hole |
| Rds On Max Id Vgs | 11.5 Ohm @ 150mA, 10V |
| Gate Charge Qg Max Vgs | 6.2nC @ 10V |
| Detailed Description | N-Channel 600V 300mA (Tc) 1W (Ta), 3W (Tc) Through Hole TO-92-3 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Supplier Device Package | TO-92-3 |
| Drainto Source Voltage Vdss | 600V |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Input Capacitance Ciss Max Vds | 170pF @ 25V |
| Current Continuous Drain Id25 C | 300mA (Tc) |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |
| Drive Voltage Max Rds On Min Rds On | 10V |