FQI2NA90TU
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Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | FQI2NA90TU |
| Manufacturer | AMI Semiconductor / ON Semiconductor |
| Description | MOSFET N-CH 900V 2.8A I2PAK |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - FETs, MOSFETs - Single |
| Series | QFET® |
| Vgs Max | ±30V |
| F E T Type | N-Channel |
| Packaging | Tube |
| Technology | MOSFET (Metal Oxide) |
| Vgsth Max Id | 5V @ 250µA |
| Package Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Mounting Type | Through Hole |
| Rds On Max Id Vgs | 5.8 Ohm @ 1.4A, 10V |
| Gate Charge Qg Max Vgs | 20nC @ 10V |
| Detailed Description | N-Channel 900V 2.8A (Tc) 3.13W (Ta), 107W (Tc) Through Hole I2PAK (TO-262) |
| Power Dissipation Max | 3.13W (Ta), 107W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Supplier Device Package | I2PAK (TO-262) |
| Drainto Source Voltage Vdss | 900V |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Input Capacitance Ciss Max Vds | 680pF @ 25V |
| Current Continuous Drain Id25 C | 2.8A (Tc) |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |
| Drive Voltage Max Rds On Min Rds On | 10V |