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Product Image
FQB8N90CTM

Images are for reference only. See Product Specifications for product details.

Product Details

Part Number FQB8N90CTM
Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET N-CH 900V 6.3A D2PAK
Datasheet View Datasheet
Category Discrete Semiconductor Products
Subcategory Transistors - FETs, MOSFETs - Single
Series QFET®
Vgs Max ±30V
F E T Type N-Channel
Packaging Cut Tape (CT)
Other Names FQB8N90CTMCT
Technology MOSFET (Metal Oxide)
Vgsth Max Id 5V @ 250µA
Package Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type Surface Mount
Rds On Max Id Vgs 1.9 Ohm @ 3.15A, 10V
Gate Charge Qg Max Vgs 45nC @ 10V
Detailed Description N-Channel 900V 6.3A (Tc) 171W (Tc) Surface Mount D²PAK (TO-263AB)
Power Dissipation Max 171W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Supplier Device Package D²PAK (TO-263AB)
Drainto Source Voltage Vdss 900V
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Input Capacitance Ciss Max Vds 2080pF @ 25V
Current Continuous Drain Id25 C 6.3A (Tc)
Moisture Sensitivity Level M S L 1 (Unlimited)
Drive Voltage Max Rds On Min Rds On 10V

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