FQB4N20TM
Images are for reference only. See Product Specifications for product details.
Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | FQB4N20TM |
| Manufacturer | AMI Semiconductor / ON Semiconductor |
| Description | MOSFET N-CH 200V 3.6A D2PAK |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - FETs, MOSFETs - Single |
| Series | QFET® |
| Vgs Max | ±30V |
| F E T Type | N-Channel |
| Packaging | Cut Tape (CT) |
| Other Names | FQB4N20TMCT |
| Technology | MOSFET (Metal Oxide) |
| Vgsth Max Id | 5V @ 250µA |
| Package Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Rds On Max Id Vgs | 1.4 Ohm @ 1.8A, 10V |
| Gate Charge Qg Max Vgs | 6.5nC @ 10V |
| Detailed Description | N-Channel 200V 3.6A (Tc) 3.13W (Ta), 45W (Tc) Surface Mount D²PAK (TO-263AB) |
| Power Dissipation Max | 3.13W (Ta), 45W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Supplier Device Package | D²PAK (TO-263AB) |
| Drainto Source Voltage Vdss | 200V |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Input Capacitance Ciss Max Vds | 220pF @ 25V |
| Current Continuous Drain Id25 C | 3.6A (Tc) |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |
| Drive Voltage Max Rds On Min Rds On | 10V |