FQB17N08LTM
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Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | FQB17N08LTM |
| Manufacturer | AMI Semiconductor / ON Semiconductor |
| Description | MOSFET N-CH 80V 16.5A D2PAK |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - FETs, MOSFETs - Single |
| Series | QFET® |
| Vgs Max | ±20V |
| F E T Type | N-Channel |
| Packaging | Tape & Reel (TR) |
| Technology | MOSFET (Metal Oxide) |
| Vgsth Max Id | 2V @ 250µA |
| Package Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Rds On Max Id Vgs | 100 mOhm @ 8.25A, 10V |
| Gate Charge Qg Max Vgs | 11.5nC @ 5V |
| Detailed Description | N-Channel 80V 16.5A (Tc) 3.75W (Ta), 65W (Tc) Surface Mount D²PAK (TO-263AB) |
| Power Dissipation Max | 3.75W (Ta), 65W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Supplier Device Package | D²PAK (TO-263AB) |
| Drainto Source Voltage Vdss | 80V |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Input Capacitance Ciss Max Vds | 520pF @ 25V |
| Current Continuous Drain Id25 C | 16.5A (Tc) |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |
| Drive Voltage Max Rds On Min Rds On | 5V, 10V |