FQA33N10
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Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | FQA33N10 |
| Manufacturer | AMI Semiconductor / ON Semiconductor |
| Description | MOSFET N-CH 100V 36A TO-3P |
| Datasheet | View Datasheet |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - FETs, MOSFETs - Single |
| Series | QFET® |
| Vgs Max | ±25V |
| F E T Type | N-Channel |
| Packaging | Tube |
| Technology | MOSFET (Metal Oxide) |
| Vgsth Max Id | 4V @ 250µA |
| Package Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Rds On Max Id Vgs | 52 mOhm @ 18A, 10V |
| Gate Charge Qg Max Vgs | 51nC @ 10V |
| Detailed Description | N-Channel 100V 36A (Tc) 163W (Tc) Through Hole TO-3P |
| Power Dissipation Max | 163W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Supplier Device Package | TO-3P |
| Drainto Source Voltage Vdss | 100V |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Input Capacitance Ciss Max Vds | 1500pF @ 25V |
| Current Continuous Drain Id25 C | 36A (Tc) |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |
| Drive Voltage Max Rds On Min Rds On | 10V |