FQA13N80-F109
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Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | FQA13N80-F109 |
| Manufacturer | AMI Semiconductor / ON Semiconductor |
| Description | MOSFET N-CH 800V 12.6A TO-3P |
| Datasheet | View Datasheet |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - FETs, MOSFETs - Single |
| Series | QFET® |
| Vgs Max | ±30V |
| F E T Type | N-Channel |
| Packaging | Tube |
| Other Names | FQA13N80_F109 FQA13N80_F109-ND FQA13N80_F109FS FQA13N80_F109FS-ND FQA13N80F109 |
| Technology | MOSFET (Metal Oxide) |
| Vgsth Max Id | 5V @ 250µA |
| Package Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Rds On Max Id Vgs | 750 mOhm @ 6.3A, 10V |
| Gate Charge Qg Max Vgs | 88nC @ 10V |
| Detailed Description | N-Channel 800V 12.6A (Tc) 300W (Tc) Through Hole TO-3PN |
| Power Dissipation Max | 300W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Supplier Device Package | TO-3PN |
| Drainto Source Voltage Vdss | 800V |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Input Capacitance Ciss Max Vds | 3500pF @ 25V |
| Current Continuous Drain Id25 C | 12.6A (Tc) |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |
| Drive Voltage Max Rds On Min Rds On | 10V |